Fairchild Intros New FDS3572 80 V MOSFET

Fairchild Semiconductor International Inc. (South Portland, ME) announced its new FDS3572 80 V, N-channel MOSFET in SO-8 packaging for both primary-side dc-dc converter and secondary-side synchronous rectifier switching power supply designs. The FDS3572 is well suited for pre-regulated, high-density, isolated, full-bridge or half-bridge, dc-dc converter circuit applications and primary-side applications such as low-voltage telecom power supplies, dc-dc converters, networking and data communications power supplies, servers, and voltage regulator modules supporting intermediate bus architectures.

The FDS3572 boasts a 7.5 nC Miller charge (Qgd) that cliams to be 38% lower than products with similar RDS(on) ratings. The low Miller charge, combined with a low RDS(on) of 16 mΩ, adds up to a figure of merit of 120. The device also features best-in-class total gate charge (31 nC, at VGS = 10 V) for low power loss, a low QRR (70 nC) for lower reverse recovery losses, and high avalanche energy capability (EAS = 515 mJ). The device can also be used as a synchronous rectifier to replace traditional higher-voltage Schottky rectifiers in the secondary-side of a dc-dc converter for output voltages from 5 V to 52 V.

The lead-free FDS3572 meets the requirements of the joint IPC/JEDEC standard J-STD-020B, and is compliant with the European Union requirements that will take effect in 2005. The FDS3572 is priced at $1.18 in 1,000 piece quantities. Available now, delivery is eight weeks ARO.