EEPower

Fairchild Adds New PowerTrench MOSFETs


New Products Mar 11, 2002 by Jeff Shepard

Fairchild Semiconductor International (San Jose, CA) announced new additions to its PowerTrench MOSFET line, which provide optimized combined high-side/low-side switch efficiency in synchronous rectifier designs. The FDS6688 and the FDS6694 utilize PowerTrench MOSFET technology and are suitable for notebook, desktop computer and isolated dc/dc converter applications.

The FDS6694 and FDS6688 matched pair chipset provides RDS(on) and Q(G) parameters. The low gate charge, low gate resistance and low on-resistance combined with dramatic die-size reductions are the result of recent advances in PowerTrench MOSFET technology. The low RDS(on) (4.5V) gate drive allows high efficiency to be maintained over a wide operating range. For less critical applications, another new MOSFET, the FDS6682, offers an additional cost-saving option. The new n-channel MOSFETs are offered in space-saving SO-8 packages, rated at 175 degrees C, and are available in tape-and-reel packing.

Pricing is $1.19 for the FDS6688, $0.54 for the FDS6694 and $0.94 for the FDS6682 in 1,000-piece quantities. Samples and production quantities are available now. Delivery is eight weeks ARO.