Efficient Power Conversion Corp. Expands eGaN FET Family

Efficient Power Conversion Corp. (EPC) announced the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET® family. The EPC2014 FET is a 1.87 mm², 40VDS, 10A device with a maximum RDS(ON) of 16mΩ with 5V applied to the gate. This eGaN FET is said to provide significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150°C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

According to EPC, compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed dc-dc power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

"In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant," noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key.