Dual-Channel MOSFETs Simplify Synchronous Buck Design

Advanced Power Electronics Corp. (USA) has launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck dc-dc converter power designs. Packaged in a small 3mm square PMPAK®3x3, the AP6950GYT comprises a high-side control MOSFET (CH-1) and a low-side synchronous MOSFET (CH-2), providing a compact solution optimized for synchronous buck applications. Drain-Source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is 18mΩ (CH-1) and 10.5mΩ (CH-2).

Current ratings are 21A for CH-1 and 39A for CH-2. Other features include: typical Qg of CH-1 of 4.2 nC (ID = 8A) and 7.5 nC for CH-2 (ID = 11A; Turn-on delay time of 6.5 ns for CH-1 (with VDS = 15V) and 9 ns for CH-2 (with VDC = 9V); turn-off delay time of 15 ns for CH-1 (RG = 3.3 Ohms) and 20 ns for CH-2 (RG = 3.3 Ohms); and reverse recovery time for the source-drain diode in CH-1 is 13 ns (with IS = 8A and VGS = 0V) and 16 ns for CH-2 (with IS = 11A and VGS = 0V).

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “Our MOSFETs provide the designer with cost-effective performance whilst retaining the best combination of fast switching, ruggedized device design, and low on resistance.”