New Industry Products

Bare Die Ultrafast Diodes from 2A to 150A Offered in Wide Range of VF vs. trr Ratios

May 28, 2013 by Jeff Shepard

Vishay Intertechnology, Inc. today released 11 new Gen2 650 V FRED Pt® Ultrafast diodes. The "H" family of bare die devices, suitable for applications working above 40-kHz, combine extremely fast and soft recovery time with low forward voltage drop and reverse leakage current to reduce switching losses in solar inverters, UPS, electric vehicles and hybrid electric vehicles, welding machines, servers, and continuous conduction mode power factor correction (CCM PFC). The "U" series, available on request for applications up to 40-kHz, offers a much lower forward voltage drop to optimize conduction losses.

The Vishay Semiconductors Ultrafast diodes released today are offered with a wide range of rated currents from 2A to 150A. The high blocking voltage capability of the devices allows designers to provide additional safety margins and increase power density in end products. Equivalent packaged devices are available on request.

To maximize efficiency, the diodes are offered with a wide range of forward voltage vs. reverse recovery time ratios. The devices feature typical reverse recovery times down to 28 ns at +25 °C (di/dt = 200 A/µs) and forward voltage down to 1.38 V typical. For a more robust and cost-effective design, the diodes offer a maximum operating junction temperature of +175 °C.