EEPower

AMIS Intros New I3T50 Mixed­Signal Technology


New Products May 12, 2003 by Jeff Shepard

AMI Semiconductor (AMIS, Pocatello, ID) introduced a new high-voltage, mixed-signal technology that reduces component count and cost, and delivers high-density application-specific integrated circuits (ASICs) with chip areas that are up to 40% smaller than other system-on-chip (SoC) solutions. The new I3T50 "Smart Power" technology will simplify the implementation of designs requiring high-performance, compact and robust ASICs with operations up to 50V. As a result, the technology is suitable for sensor interface applications targeted at automotive and industrial systems, computer peripherals, and consumer equipment.

The I3T50 offers logic gate densities of 15,000/mm², and can be used to create Smart Power SoC devices with gate counts as high as 500,000. In addition to the digital logic, the devices can incorporate high-voltage circuitry such as motor controller drives, dc/dc converters and high-precision analog circuits, including bandgap filters, analog-to-digital converters and digital-to-analog converters.

The I3T50-based prototypes have already been produced and successfully evaluated in a target application. Working prototypes are available immediately.