New Industry Products

AEC-Q101 600V MOSFETs for Full- and Half-Bridge ZVS Converters

January 22, 2019 by Scott McMahan

STMicroelectronics' MDmesh™ DM6 600V MOSFETs are AEC-Q101-qualified and have a fast-recovery body diode to deliver the performance advantages of the company's latest super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt. The MOSFETS are designed for equipment including charging stations for electric vehicles, telecom or data-center power converters, and solar inverters. According to the company, the new devices enable superior energy ratings with more robust performance and increased power density.

The MDmesh DM6 MOSFETs leverage ST's carrier-lifetime control technology and have reduced reverse-recovery time (trr) to minimize power dissipation in the diode when turning off after freewheeling. Recovery softness is optimized to improve reliability.

In addition, very low gate charge (Qg) and on-resistance (Rds(ON)), coupled with a capacitance profile tailored for light loads, allow higher operating frequencies and greater efficiency, with simplified thermal management and reduced EMI.

MDmesh DM6 shows improved trr and Qrr compared to M6

Part of the STPOWER™ portfolio, the MDmesh DM6 family comprises 23 part numbers covering current ratings from 15A to 72A, with gate charge (Qg) ranging from 20nC to 117nC and RDS(ON) from 0.240Ω down to 0.036Ω respectively. The choice of popular power package options includes the new low-inductance leadless TO-LL, PowerFLAT 8x8 HV, D2PAK, TO-220, and TO-247 with short leads, long leads, or Kelvin pin for applications requiring precision current sensing.

The MDmesh DM6 family is in production now. Please contact your local ST office for pricing and sample requests.