Active Clamp Structure Prevents Overvoltage when Turning Off Inductive Loads

Toshiba Corporationhas launched a MOSFET, "SSM3K337R", for relay drivers. The new device uses an active clamp structure that prevents overvoltage when the inductive load of relay devices is switched off. Samples are currently available and mass production is scheduled to start in September.

Packaged in a 2.9mm X 2.8mm SOT-23F package, the SSM3K337R features the following specifications: Vdds = 38V; Vgss = +/- 20V; Id = 2A; Rds(on) = 161mOhms with Vgs = 4V, 155mOhms with Vgs = 4.5V, and 135mOhms with Vgs = 10V; Ciss = 120pF; and Qg at 2A = 3.6nC.

Demand for relay drivers is growing for automobile, since the number of electric components equipped by automobile is increasing. The "SSM3K337R" reduces ON-resistance by half and improves allowable power dissipation to approximately 1.6 times that of equivalent products.