40V/45V N-Channel FETs with RDS(on) Down to 0.80 mΩ

Toshiba Corporation's Storage & Electronic Devices Solutions Company has expanded its "U-MOS IX-H Series" of low-voltage N-channel power MOSFETs with new 40V and 45V products claiming industry leading-class low on-resistance and high-speed performance. The new products—nine 40V and five 45V versions—are designed for industrial and consumer applications, including high-efficiency dc-dc converters, high-efficiency dc-dc converters, power supplies and motor drives.

These N-channel MOSFETs are rated for 38A to 150A. Depending on the ratings, they are offered in five package styles: SOP Advance, TSON Advance, TO-220, TO-220SIS, and DSOP Advance. Total gate charge (Qg) ranges from 24nC to 122nC and input capacitance ranges from 1570pF to 7700pF. With a 10V gate drive, RDS(on) ranges from 0.80 mΩ to 7.2 mΩ and with a 4.5V gate drive, RDS(on) ranges from 1.35 mΩ to 9.7 mΩ

The new MOSFETs utilize Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to achieve the industry’s leading-class low on-resistance and high-speed performance. The new structure lowers the performance index for “RDS(on) * Qsw”, improving switching applications to a level surpassing current Toshiba products.

Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Furthermore, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI.