1.7kV IGBT Modules rated for 75A to 600A

Mitsubishi Electric Corporation announced that it would begin shipping samples of 17 new models of T series power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBTs). The new modules have a 1.7kV rating and realize improved power loss and reliability for general-purpose inverters, uninterruptible power supplies (UPS), photovoltaic (PV), wind power-generation systems and other industrial equipment. Sample shipments will begin September 30.

The 17 new models, all rated for 1.7kV, include 12 NX-types (six with solder pin package and six with press fit pin package) with current ratings ranging from 100A - 600A and five standard package models ranging from 75A - 300A. These modules are especially-suited for 690Vac and 1000Vdc PV system inverter designs.

These new modules feature reduced power loss due to the use of seventh-generation IGBTs and diodes. The 1.7kV rating seventh-generation CSTBTTM1 chip achieves low power loss and low EMI noise. And the Relaxed Field of Cathode (RFC) diode chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge.

The latest package technology enhances reliability of these de facto standard package configurations: The internal structure is improved, keeping compatibility with de facto standard package. And integration of insulation and copper base in the substrate, along with improved internal electrode construction, help to increase thermal cycle life3and lower internal inductance, leading to more reliable equipment performance.