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Silicon Carbide Drives Material Innovation for High Power Electronics

Silicon Carbide Drives Material Innovation for High Power Electronics


News Jun 05, 2012 by Jeff Shepard
Mitsubishi Electric Develops All-SiC Inverter with High Power Density

Mitsubishi Electric Develops All-SiC Inverter with High Power Density

SemiSouth SiC JFETs Simplify Fast Start-Up of 3-Phase Power Supplies

SemiSouth SiC JFETs Simplify Fast Start-Up of 3-Phase Power Supplies

Competition in Wide-Bandgap Devices: a Technical Session at PCIM 2012

Competition in Wide-Bandgap Devices: a Technical Session at PCIM 2012


News May 10, 2012 by Jeff Shepard
SiC and GaN Advances from Multiple Companies at PCIM

SiC and GaN Advances from Multiple Companies at PCIM


News May 08, 2012 by Jeff Shepard
GaN Systems & APEI to Package Gallium Nitride Power Transistors for High-Temperature Applications

GaN Systems & APEI to Package Gallium Nitride Power Transistors for High-Temperature Applications

Cree Technology Breakthrough Enables 50A Silicon Carbide Power Devices

Cree Technology Breakthrough Enables 50A Silicon Carbide Power Devices

GaN Power Semiconductor Market to Exceed $1 Billion by 2021

GaN Power Semiconductor Market to Exceed $1 Billion by 2021


News Mar 15, 2012 by Jeff Shepard
Plessey Acquires Cambridge University Spin-Out Company, and its Novel GaN on Silicon Technology

Plessey Acquires Cambridge University Spin-Out Company, and its Novel GaN on Silicon Technology


News Feb 08, 2012 by Jeff Shepard
Cree Releases SPICE Model for Silicon Carbide Power MOSFET

Cree Releases SPICE Model for Silicon Carbide Power MOSFET

TI Extends Family of GaN FET driver ICs with New Gate Driver

TI Extends Family of GaN FET driver ICs with New Gate Driver

EPC Publishes First Application-focused Gallium Nitride (GaN) Transistors Textbook

EPC Publishes First Application-focused Gallium Nitride (GaN) Transistors Textbook

Cree Releases Packaged 1700V SiC Schottky Diodes for Solar, Motor Drive and Traction Applications

Cree Releases Packaged 1700V SiC Schottky Diodes for Solar, Motor Drive and Traction Applications

Renesas Announces Low-Loss Silicon Carbide Power Device Series Integrating Power Conversion Circuit in Single Package

Renesas Announces Low-Loss Silicon Carbide Power Device Series Integrating Power Conversion Circuit in Single Package

Powerex Introduces Low-Profile SiC MOSFET Modules Featuring Multiple Circuit Topologies

Powerex Introduces Low-Profile SiC MOSFET Modules Featuring Multiple Circuit Topologies

Soitec and Sumitomo Electric Announce Milestone in Joint Development of Engineered Gallium Nitride Substrates

Soitec and Sumitomo Electric Announce Milestone in Joint Development of Engineered Gallium Nitride Substrates


News Jan 23, 2012 by Jeff Shepard
New Power Semiconductor Module from Vincotech Combines MNPC Topology with SiC Switches

New Power Semiconductor Module from Vincotech Combines MNPC Topology with SiC Switches

Renesas Announces Low-Loss SiC Power Devices Integrating Power Conversion Circuit in Single Chip

Renesas Announces Low-Loss SiC Power Devices Integrating Power Conversion Circuit in Single Chip

MagnaChip to Offer Vertical Bipolar Junction Transistor Type ESD Device

MagnaChip to Offer Vertical Bipolar Junction Transistor Type ESD Device

Cree Releases Silicon Carbide Power Devices In Chip Form

Cree Releases Silicon Carbide Power Devices In Chip Form