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Infineon Introduces 5th Generation thinQ! SiC Schottky Barrier Diodes

Infineon Introduces 5th Generation thinQ! SiC Schottky Barrier Diodes

Transphorm Releases Industry’s First JEDEC Qualified 600V GaN HEMT

Transphorm Releases Industry’s First JEDEC Qualified 600V GaN HEMT

STMICROELECTRONICS Reveals Silicon Carbide Solutions to Solar Challenges at Solar Power International 2012

STMICROELECTRONICS Reveals Silicon Carbide Solutions to Solar Challenges at Solar Power International 2012

Successful Trial Manufacture of first GaN Vertical Diode that can withstand 3,000V

Successful Trial Manufacture of first GaN Vertical Diode that can withstand 3,000V


News Sep 03, 2012 by Jeff Shepard
Cree Introduces 150-mm 4HN Silicon Carbide Epitaxial Wafers

Cree Introduces 150-mm 4HN Silicon Carbide Epitaxial Wafers


News Sep 03, 2012 by Jeff Shepard
SDK Increases SiC Epitaxial Wafer Production Capacity by 2.5 Times

SDK Increases SiC Epitaxial Wafer Production Capacity by 2.5 Times


News Aug 29, 2012 by Jeff Shepard
GaN Systems and Converter Technology Partner to Deliver Application Support for Advanced Power Control and Conversion GaN Applications

GaN Systems and Converter Technology Partner to Deliver Application Support for Advanced Power Control and Conversion GaN Applications


News Aug 15, 2012 by Jeff Shepard
Putting GaN to Work in Your Power Supply

Putting GaN to Work in Your Power Supply


News Aug 15, 2012 by Jeff Shepard
2012 Darnell Power Forum Program Announced;  Includes Half-Day Pre-Conference Seminar "Putting GaN to Work in Your Power Supply"

2012 Darnell Power Forum Program Announced;  Includes Half-Day Pre-Conference Seminar "Putting GaN to Work in Your Power Supply"


News Aug 13, 2012 by Jeff Shepard
Efficient Power Conversion Corp. Announces WiTricity Demonstration System Featuring High Frequency Gallium Nitride (eGaN) FETs

Efficient Power Conversion Corp. Announces WiTricity Demonstration System Featuring High Frequency Gallium Nitride (eGaN) FETs

Soraa Chosen to Lead DOE ARPA-E Project on Bulk Gallium Nitride Substrates

Soraa Chosen to Lead DOE ARPA-E Project on Bulk Gallium Nitride Substrates


News Aug 07, 2012 by Jeff Shepard
Rohm Introduces First SiC Power MOSFET with  Internal SiC SBD

Rohm Introduces First SiC Power MOSFET with Internal SiC SBD

ROHM Introduces SiC Schottky Barrier Diodes to Reduce Power Dissipation in PV Power Conditioners, Industrial Equipment, and Servers

ROHM Introduces SiC Schottky Barrier Diodes to Reduce Power Dissipation in PV Power Conditioners, Industrial Equipment, and Servers

TriQuint Releases New GaN Product Solutions to Increase RF Performance in Defense & Commercial Systems

TriQuint Releases New GaN Product Solutions to Increase RF Performance in Defense & Commercial Systems

ROHM Semiconductor Presents New High Voltage Isolated SiC Gate Drivers

ROHM Semiconductor Presents New High Voltage Isolated SiC Gate Drivers

Cree Unveils New GaN RF MMIC Process Technologies for Telecommunication and Radar Systems

Cree Unveils New GaN RF MMIC Process Technologies for Telecommunication and Radar Systems

Silicon Carbide Drives Material Innovation for High Power Electronics

Silicon Carbide Drives Material Innovation for High Power Electronics


News Jun 05, 2012 by Jeff Shepard
Mitsubishi Electric Develops All-SiC Inverter with High Power Density

Mitsubishi Electric Develops All-SiC Inverter with High Power Density

SemiSouth SiC JFETs Simplify Fast Start-Up of 3-Phase Power Supplies

SemiSouth SiC JFETs Simplify Fast Start-Up of 3-Phase Power Supplies

Competition in Wide-Bandgap Devices: a Technical Session at PCIM 2012

Competition in Wide-Bandgap Devices: a Technical Session at PCIM 2012


News May 10, 2012 by Jeff Shepard