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Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
Littelfuse Owns Majority of SiC Device Maker Monolith Semi

Littelfuse Owns Majority of SiC Device Maker Monolith Semi


News Mar 02, 2017 by Jeff Shepard
GaN enables Wide-Input and Compact 12W DC-DCs

GaN enables Wide-Input and Compact 12W DC-DCs


News Mar 02, 2017 by Jeff Shepard
SOI Wafer is a Suitable Substrate for GaN Crystals

SOI Wafer is a Suitable Substrate for GaN Crystals


News Mar 02, 2017 by Jeff Shepard
SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

Transphorm to Rev High-Voltage GaN at APEC

Transphorm to Rev High-Voltage GaN at APEC

1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…


Bulk AlN Platform for GaN High Voltage and Power

Bulk AlN Platform for GaN High Voltage and Power


News Feb 20, 2017 by Jeff Shepard
Integrated Half-Bridge GaN Power IC

Integrated Half-Bridge GaN Power IC

Low-Leakage, Doping-Free 600V GaN HEMT Epiwafers

Low-Leakage, Doping-Free 600V GaN HEMT Epiwafers


News Feb 15, 2017 by Jeff Shepard
GaNonCMOS Project Aims for GaN Commercialization

GaNonCMOS Project Aims for GaN Commercialization


News Feb 14, 2017 by Jeff Shepard
48W Aux. Power Supply Evaluation Board for SiC FETs

48W Aux. Power Supply Evaluation Board for SiC FETs

GaN Transistor Gate Drive Optocouplers

GaN Transistor Gate Drive Optocouplers

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…


NY-PEMC Fabs Initial 150mm SiC-Based Patterned Wafers

NY-PEMC Fabs Initial 150mm SiC-Based Patterned Wafers


News Feb 12, 2017 by Jeff Shepard
SiC Computer Chips for Longer Venus Surface Missions

SiC Computer Chips for Longer Venus Surface Missions


News Feb 12, 2017 by Jeff Shepard
£4.3 Million for GaN-on-Diamond Microwave Power

£4.3 Million for GaN-on-Diamond Microwave Power


News Feb 09, 2017 by Jeff Shepard
650V GaN Power ICs get Production Qualification

650V GaN Power ICs get Production Qualification


News Feb 06, 2017 by Jeff Shepard
Motor Control for SiC Drives Embedded in Automotive MCUs

Motor Control for SiC Drives Embedded in Automotive MCUs

DMOS Transistor Arrays with Data Storage Function

DMOS Transistor Arrays with Data Storage Function