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GaN FETs Extend Cost/Performance Benefits over Silicon

GaN FETs Extend Cost/Performance Benefits over Silicon

ROHM Joins CharIN to Contribute SiC Technology

ROHM Joins CharIN to Contribute SiC Technology


News Mar 13, 2017 by Jeff Shepard
New-Generation Transistor Arrays with DMOS FET Outputs

New-Generation Transistor Arrays with DMOS FET Outputs

High-Density SiC and Si Inverter Stack Reference Models

High-Density SiC and Si Inverter Stack Reference Models

GaN Power ICs and Ten Technical Papers on Show in Tampa

GaN Power ICs and Ten Technical Papers on Show in Tampa

RFHIC acquiring GaN-on-Diamond Tech from E6

RFHIC acquiring GaN-on-Diamond Tech from E6


News Mar 09, 2017 by Jeff Shepard
IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.


SiC Power Electronics gets GE $4.1 Million from U.S. Army

SiC Power Electronics gets GE $4.1 Million from U.S. Army


News Mar 08, 2017 by Jeff Shepard
EPC to Showcase Life-Changing Applications Using GaN

EPC to Showcase Life-Changing Applications Using GaN

Mitsubishi Claims Smallest SiC Inverter for HEVs

Mitsubishi Claims Smallest SiC Inverter for HEVs


News Mar 08, 2017 by Jeff Shepard
GaN-on-Si Devices Show No Degradation from Irradiation

GaN-on-Si Devices Show No Degradation from Irradiation


News Mar 07, 2017 by Jeff Shepard
Misubishi adds 600V SiC Schottky-Barrier Diodes

Misubishi adds 600V SiC Schottky-Barrier Diodes

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
Littelfuse Owns Majority of SiC Device Maker Monolith Semi

Littelfuse Owns Majority of SiC Device Maker Monolith Semi


News Mar 02, 2017 by Jeff Shepard
GaN enables Wide-Input and Compact 12W DC-DCs

GaN enables Wide-Input and Compact 12W DC-DCs


News Mar 02, 2017 by Jeff Shepard
SOI Wafer is a Suitable Substrate for GaN Crystals

SOI Wafer is a Suitable Substrate for GaN Crystals


News Mar 02, 2017 by Jeff Shepard
SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

Transphorm to Rev High-Voltage GaN at APEC

Transphorm to Rev High-Voltage GaN at APEC

1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…