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Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

PV Wafer Maker SunEdison Announces $90Million IPO

PV Wafer Maker SunEdison Announces $90Million IPO


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard
Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

Backup Power Controller and Supercap Charger/Monitor IC

Backup Power Controller and Supercap Charger/Monitor IC

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

Mitsubishi  showing Hybrid SiC Power Modules at PCIM

Mitsubishi showing Hybrid SiC Power Modules at PCIM

1.2KV SiC MOSFET in a MiniBLOC SOT-227

1.2KV SiC MOSFET in a MiniBLOC SOT-227

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Discrete 650V SiC Rectifiers rated for 20A and 50A

Discrete 650V SiC Rectifiers rated for 20A and 50A

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning

RCD Claims the Widest Range of Thin-Film Chip Resistors

RCD Claims the Widest Range of Thin-Film Chip Resistors

Mitsubishi to Supply All-SiC Traction Inverters to Odakyu Electric Railway

Mitsubishi to Supply All-SiC Traction Inverters to Odakyu Electric Railway


News Apr 29, 2014 by Jeff Shepard
Dual Output Differential Speed and Direction Sensor IC

Dual Output Differential Speed and Direction Sensor IC

ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342

Low-Power MCUs now offered in Chip-Scale Packages

Low-Power MCUs now offered in Chip-Scale Packages