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EU CHALLENGE Project Seeks 3C-SiC Devices for EVs

EU CHALLENGE Project Seeks 3C-SiC Devices for EVs


News Jan 31, 2017 by Jeff Shepard
650V and 1200V SiC Schottkys for Multi-kW Designs

650V and 1200V SiC Schottkys for Multi-kW Designs

Wireless Power Transmit IC Sends Power Over Distance

Wireless Power Transmit IC Sends Power Over Distance


News Jan 29, 2017 by Jeff Shepard
The Creation of Silicon Carbide  Revolutionary Semiconductor

The Creation of Silicon Carbide Revolutionary Semiconductor

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…


Power Management IC Targets DDR4 NVDIMMs

Power Management IC Targets DDR4 NVDIMMs

Innovative Glass Substrates for Semiconductor Packaging

Innovative Glass Substrates for Semiconductor Packaging


News Jan 19, 2017 by Jeff Shepard
1608mm Size Metal Alloy Chip Inductor

1608mm Size Metal Alloy Chip Inductor

Mouser Signs Global Agreement with United Silicon Carbide

Mouser Signs Global Agreement with United Silicon Carbide


News Jan 18, 2017 by Jeff Shepard
Precision Thin-Film Tantalum Nitride Chip Resistors

Precision Thin-Film Tantalum Nitride Chip Resistors

Low-Voltage Bipolar Stepper or Dual DC Motor Driver IC

Low-Voltage Bipolar Stepper or Dual DC Motor Driver IC

650V SiC Schottkys Handle 70% More Surge Current

650V SiC Schottkys Handle 70% More Surge Current

Power Management IC with LIN and High-Speed CAN

Power Management IC with LIN and High-Speed CAN

900V, 10 mOhm SiC MOSFET for EV Drive Trains

900V, 10 mOhm SiC MOSFET for EV Drive Trains

6W Rated Current Sense Chip Resistor

6W Rated Current Sense Chip Resistor

Dual-Die Hall Sensor IC for Safety-Critical Applications

Dual-Die Hall Sensor IC for Safety-Critical Applications

Choice between Si, SiC and GaN Growing in Complexity

Choice between Si, SiC and GaN Growing in Complexity


News Dec 21, 2016 by Jeff Shepard
SiC Technology Introduced into Formula E

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.


new products Dec 19, 2016 by ROHM
The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.


Multi-Function System Power IC for SSDs

Multi-Function System Power IC for SSDs

Atomera to Discuss Semiconductor Materials Advancements

Atomera to Discuss Semiconductor Materials Advancements