This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…
This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…
ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017…
ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.
This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max…
This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.