EEPower

Latest Silicon Carbide Articles

Categories

DC-DC Converters Optimized to Power IGBT & SiC Drivers

DC-DC Converters Optimized to Power IGBT & SiC Drivers

Metal Foil on Ceramic Chip Resistors up to 10A

Metal Foil on Ceramic Chip Resistors up to 10A

USB-to-I2S Bridge Chip Simplifies Digital Audio Design

USB-to-I2S Bridge Chip Simplifies Digital Audio Design

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

This article features the full design support capabilities for a new evaluation board utilizing Wolfspeed's C2M1000170J for auxiliary power…


Announcing Collaboration Sales in Japan

Announcing Collaboration Sales in Japan

ROHM and SEMIKRON will kick-off collaboration sales of SiC power devices and modules, to contribute to the innovative evolution of the Japanese…


new products Apr 24, 2017 by ROHM
Semiconductor Test Solution for IoT Connectivity

Semiconductor Test Solution for IoT Connectivity

ROHM Expands its Range of SiC and Si Power Devices

ROHM Expands its Range of SiC and Si Power Devices

Stepping Motor Driver IC with Anti-Stall Feedback Architecture

Stepping Motor Driver IC with Anti-Stall Feedback Architecture

Relay Driver IC Operates with Vin from 2 to 42-Vdc

Relay Driver IC Operates with Vin from 2 to 42-Vdc

80V Multi-Channel Solenoid and Unipolar Motor Driver IC

80V Multi-Channel Solenoid and Unipolar Motor Driver IC

Hall Effect Switch IC with Magnet Polarity Discrimination

Hall Effect Switch IC with Magnet Polarity Discrimination

Si2 Contributes Advanced IC Power Modeling Tech to IEEE

Si2 Contributes Advanced IC Power Modeling Tech to IEEE


News Apr 11, 2017 by Jeff Shepard
Third-Generation SiC MOSFET Platform expanded to 1200V

Third-Generation SiC MOSFET Platform expanded to 1200V

Wolfspeed expands its innovative C3M™ platform through the introduction of 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Apr 07, 2017 by Wolfspeed
SiC at Japan’s Synchrotron Radiation Research Institute

SiC at Japan’s Synchrotron Radiation Research Institute


News Apr 06, 2017 by Jeff Shepard
1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

Quasi-Resonant Flyback Controller and Integrated Power IC

Quasi-Resonant Flyback Controller and Integrated Power IC

Partners to Develop Wireless Battery Management IC

Partners to Develop Wireless Battery Management IC


News Apr 05, 2017 by Jeff Shepard
A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC MOSFET Technology Platform to be Revealed

1200V SiC MOSFET Technology Platform to be Revealed