This article highlights STMicroelectronics exhibition of its latest semiconductor solutions for automotive systems supporting the electrification.
This article highlights STMicroelectronics exhibition of its latest semiconductor solutions for automotive systems supporting the electrification.
This article highlights Power Integrations SID1181KQ SCALE-iDriver™ gate driver for 750 V-rated IGBTs as part of…
This article highlights Power Integrations SID1181KQ SCALE-iDriver™ gate driver for 750 V-rated IGBTs as part of company’s range…
This article features Littelfuse Gate Drive Evaluation Platform (GDEV) that helps designers evaluate SiC MOSFETs, SiC…
This article features Littelfuse Gate Drive Evaluation Platform (GDEV) that helps designers evaluate SiC MOSFETs, SiC Schottky diodes, and other…
This article highlights Indium Corporation President and COO Ross Berntson to deliver the keynote on materials science…
This article highlights Indium Corporation President and COO Ross Berntson to deliver the keynote on materials science innovations presentation at…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.
This article highlights CISSOID CMT-TIT0697 Gate Driver board esigned to be directly mounted on CAB450M12XM3 1200V/450A…
This article highlights CISSOID CMT-TIT0697 Gate Driver board esigned to be directly mounted on CAB450M12XM3 1200V/450A SiC MOSFET Power Modules.
An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.
An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.
This article highlights UnitedSiC UF3SC 7mohm, 650V and a 9mohm, 1200V SiC FETs in a TO247-4L package as combination of…
This article highlights UnitedSiC UF3SC 7mohm, 650V and a 9mohm, 1200V SiC FETs in a TO247-4L package as combination of Gen 3 SiC JFET and Si MOSFET.
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC)…
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.