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STMicroelectronics Exhibits Latest Solutions for Automotive Systems at AUTOMOTIVE WORLD 2020

STMicroelectronics Exhibits Latest Solutions for Automotive Systems at AUTOMOTIVE WORLD 2020

This article highlights STMicroelectronics exhibition of its latest semiconductor solutions for automotive systems supporting the electrification.


Power Integrations Highly Robust SCALE-iDriver Gate Drivers Achieve AECQ100 Automotive Qualification

Power Integrations Highly Robust SCALE-iDriver Gate Drivers Achieve AECQ100 Automotive Qualification

This article highlights Power Integrations SID1181KQ SCALE-iDriver™ gate driver for 750 V-rated IGBTs as part of company’s range…


Accelerate the Design Cycles of SiCbased Power Converters Using Littelfuse039s Gate Drive Evaluation Platform

Accelerate the Design Cycles of SiCbased Power Converters Using Littelfuse039s Gate Drive Evaluation Platform

This article features Littelfuse Gate Drive Evaluation Platform (GDEV) that helps designers evaluate SiC MOSFETs, SiC Schottky diodes, and other…


new products Jan 14, 2020 by Littelfuse
Indium Corporation President to Deliver TestConX Keynote on Materials Science Innovations

Indium Corporation President to Deliver TestConX Keynote on Materials Science Innovations

This article highlights Indium Corporation President and COO Ross Berntson to deliver the keynote on materials science innovations presentation at…


MOSHEMT  Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.


CISSOID delivers Robust Gate Drivers for Wolfspeed XM3 Fast Switching SiC Power Modules

CISSOID delivers Robust Gate Drivers for Wolfspeed XM3 Fast Switching SiC Power Modules

This article highlights CISSOID CMT-TIT0697 Gate Driver board esigned to be directly mounted on CAB450M12XM3 1200V/450A SiC MOSFET Power Modules.


new products Jan 14, 2020 by CISSOID
Partnering in SiC MOSFETS to Deliver Automotive and Industrial Solutions

Partnering in SiC MOSFETS to Deliver Automotive and Industrial Solutions

An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.


SiC FETs in High-Voltage Input 15W Flyback Aux Power Supply Reference Design

SiC FETs in High-Voltage Input 15W Flyback Aux Power Supply Reference Design


News Jan 13, 2020 by Paul Shepard
600-V 50-mΩ Integrated GaN FET Power Stage with Overcurrent Protection

600-V 50-mΩ Integrated GaN FET Power Stage with Overcurrent Protection

Innolectric 22kW On-Board EV Charger Uses STMicro SiC Devices

Innolectric 22kW On-Board EV Charger Uses STMicro SiC Devices


News Jan 13, 2020 by Paul Shepard
Ultra-low 7-mohm and 9-mohm RDSon SiC FETs for EV Inverters Battery Chargers and Circuit Protection

Ultra-low 7-mohm and 9-mohm RDSon SiC FETs for EV Inverters Battery Chargers and Circuit Protection

This article highlights UnitedSiC UF3SC 7mohm, 650V and a 9mohm, 1200V SiC FETs in a TO247-4L package as combination of Gen 3 SiC JFET and Si MOSFET.


Digital Control and GaN HEMTs in 1.2kW Bridgeless Totem-Pole PFC Reference Design

Digital Control and GaN HEMTs in 1.2kW Bridgeless Totem-Pole PFC Reference Design


News Jan 11, 2020 by Paul Shepard
Design and Optimization of Silicon Carbide Schottky Diode

Design and Optimization of Silicon Carbide Schottky Diode

This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.


SOS LAB Signs Solid-State LiDAR Collaboration MOU with ON Semiconductor

SOS LAB Signs Solid-State LiDAR Collaboration MOU with ON Semiconductor


News Jan 09, 2020 by Paul Shepard
GaN FET Enables Nanosecond Laser Driver Reference Design for LiDAR

GaN FET Enables Nanosecond Laser Driver Reference Design for LiDAR


News Jan 09, 2020 by Paul Shepard
GaN-Based Time-of-Flight Demonstration Board Drives Lasers with 1.2ns Pulses

GaN-Based Time-of-Flight Demonstration Board Drives Lasers with 1.2ns Pulses

High-Voltage GaN Transistors Fabricated using Transmorphic Epitaxial Growth

High-Voltage GaN Transistors Fabricated using Transmorphic Epitaxial Growth


News Jan 08, 2020 by Paul Shepard
High-Voltage 30W DC-DC Module for Scientific and Semiconductor Applications

High-Voltage 30W DC-DC Module for Scientific and Semiconductor Applications

AUKEY Uses GaN from Navitas to Design World’s Smallest Chargers

AUKEY Uses GaN from Navitas to Design World’s Smallest Chargers

Compact USB-C Solutions with Power Delivery and GaN Technology

Compact USB-C Solutions with Power Delivery and GaN Technology