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German Researchers use SiC and GaN to Cut Energy Loss in Half

German Researchers use SiC and GaN to Cut Energy Loss in Half


News Jun 30, 2014 by Jeff Shepard
Smartenergy ramps up Crystalline Silicon PV Production in Germany

Smartenergy ramps up Crystalline Silicon PV Production in Germany


News Jun 26, 2014 by Jeff Shepard
Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Move expands GaN Systems’ Headquarters Size by 3X

Move expands GaN Systems’ Headquarters Size by 3X


News Jun 24, 2014 by Jeff Shepard
4kV XPT IGBT in a Discrete Isolated Package

4kV XPT IGBT in a Discrete Isolated Package

Fifth-Generation 1200V SiC Schottky Diodes

Fifth-Generation 1200V SiC Schottky Diodes

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid


News Jun 15, 2014 by Jeff Shepard
Natcore Engages Fraunhofer to Back Black Silicon

Natcore Engages Fraunhofer to Back Black Silicon


News Jun 12, 2014 by Jeff Shepard
$5.5 Million from ABB Funds  Power Semiconductor Professorship

$5.5 Million from ABB Funds Power Semiconductor Professorship


News Jun 09, 2014 by Jeff Shepard
Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC

Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC


News Jun 04, 2014 by Jeff Shepard
Monolith Partners with X-FAB to offer SiC Power Devices by 2015

Monolith Partners with X-FAB to offer SiC Power Devices by 2015


News Jun 02, 2014 by Jeff Shepard
Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Three-phase MOSFET Driver can replace Relays and Discrete Drivers

Three-phase MOSFET Driver can replace Relays and Discrete Drivers

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard