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Toshiba Promises both SiC and GaN Power Devices

Toshiba Promises both SiC and GaN Power Devices


News Aug 27, 2014 by Jeff Shepard
Where Does SiC Fit?

Where Does SiC Fit?


News Aug 26, 2014 by Jeff Shepard
Ammono Lowers GaN Substrate Prices for Little Box Challenge

Ammono Lowers GaN Substrate Prices for Little Box Challenge


News Aug 24, 2014 by Jeff Shepard
You can Join the GaN Power Roundtable Discussion

You can Join the GaN Power Roundtable Discussion


News Aug 11, 2014 by Jeff Shepard
University of Tokyo Team Improves SiC Power Devices

University of Tokyo Team Improves SiC Power Devices


News Aug 07, 2014 by Jeff Shepard
Energy Harvesting, GaN Power and DC Microgrids at Darnell’s Energy Summit

Energy Harvesting, GaN Power and DC Microgrids at Darnell’s Energy Summit


News Aug 05, 2014 by Jeff Shepard
Concord Components now a Distributor for America Semiconductor

Concord Components now a Distributor for America Semiconductor


News Aug 04, 2014 by Jeff Shepard
High-temperature SiC for Aerospace Power Conversion

High-temperature SiC for Aerospace Power Conversion


News Jul 30, 2014 by Jeff Shepard
KSR Acquires Wales-based Manufacturer of MOSFET Power Modules

KSR Acquires Wales-based Manufacturer of MOSFET Power Modules


News Jul 24, 2014 by Jeff Shepard
Driver Integrated GaN Transistors Announced by Sanken

Driver Integrated GaN Transistors Announced by Sanken

Transphorm Demonstrates GaN Progress at Techno Frontier

Transphorm Demonstrates GaN Progress at Techno Frontier

Dialog Semiconductor Terminates Merger Talks with AMS

Dialog Semiconductor Terminates Merger Talks with AMS


News Jul 23, 2014 by Jeff Shepard
Mitsubishi Previews CSTBT IGBT Power Modules for EVs

Mitsubishi Previews CSTBT IGBT Power Modules for EVs

10A and 20A Silicon Carbide Schottky Diodes

10A and 20A Silicon Carbide Schottky Diodes

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Efficient Redundancy through MOSFET Technology

Efficient Redundancy through MOSFET Technology

A4WP-Compliant 35W Wireless Power Transfer with GaN

A4WP-Compliant 35W Wireless Power Transfer with GaN

GaN Widens the Performance Gap with the Silicon MOSFETs

GaN Widens the Performance Gap with the Silicon MOSFETs

Isolated Primary-Side LED Driver with Integrated 650V FET

Isolated Primary-Side LED Driver with Integrated 650V FET

8-inch IGBT Wafer and Module Production Opens in China

8-inch IGBT Wafer and Module Production Opens in China


News Jul 09, 2014 by Jeff Shepard