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High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor

TED Announces Expanded Lineup of IGBT Gate Drivers Designed for High-Power Systems

TED Announces Expanded Lineup of IGBT Gate Drivers Designed for High-Power Systems

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver


News Apr 08, 2013 by Jeff Shepard
600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications


News Mar 03, 2013 by Jeff Shepard
High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

MagnaChip to Offer Next-Generation 0.35um High-Voltage BCD Technology

MagnaChip to Offer Next-Generation 0.35um High-Voltage BCD Technology


News Jan 06, 2013 by Jeff Shepard
EPC Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

EPC Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook


News Dec 03, 2012 by Jeff Shepard
CISSOID Introduces High-Temp N-Channel FET: 80V / 1A in Tiny SMD Package

CISSOID Introduces High-Temp N-Channel FET: 80V / 1A in Tiny SMD Package