EEPower

Latest Power FETs Articles

Categories

Off-Line PWM Controllers From Allegro feature Integrated Power FET

Off-Line PWM Controllers From Allegro feature Integrated Power FET

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor

TED Announces Expanded Lineup of IGBT Gate Drivers Designed for High-Power Systems

TED Announces Expanded Lineup of IGBT Gate Drivers Designed for High-Power Systems

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver


News Apr 08, 2013 by Jeff Shepard
600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications


News Mar 03, 2013 by Jeff Shepard
High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments