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$5.5 Million from ABB Funds  Power Semiconductor Professorship

$5.5 Million from ABB Funds Power Semiconductor Professorship


News Jun 09, 2014 by Jeff Shepard
10W USB Charger IC with Integrated Fuel Gauge Targets China

10W USB Charger IC with Integrated Fuel Gauge Targets China

Low-Power HART CMOS Modem IC for Industrial Communications

Low-Power HART CMOS Modem IC for Industrial Communications

Flexible Single-Stage Digital LED Driver IC Platform

Flexible Single-Stage Digital LED Driver IC Platform

Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC

Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC


News Jun 04, 2014 by Jeff Shepard
Monolith Partners with X-FAB to offer SiC Power Devices by 2015

Monolith Partners with X-FAB to offer SiC Power Devices by 2015


News Jun 02, 2014 by Jeff Shepard
Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Three-phase MOSFET Driver can replace Relays and Discrete Drivers

Three-phase MOSFET Driver can replace Relays and Discrete Drivers

500mA RETs in SOT23 and SOT323

500mA RETs in SOT23 and SOT323

Akros announces Global Distribution Agreement with Digi-Key

Akros announces Global Distribution Agreement with Digi-Key


News May 26, 2014 by Jeff Shepard
200-mm SOI Wafers to be made in China for RF and Power Semis

200-mm SOI Wafers to be made in China for RF and Power Semis


News May 26, 2014 by Jeff Shepard
SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
PV Wafer Maker SunEdison Announces $90Million IPO

PV Wafer Maker SunEdison Announces $90Million IPO


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard
IGBT and Rectifier Diode Modules from Littelfuse

IGBT and Rectifier Diode Modules from Littelfuse