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Transphorm Demonstrates GaN Progress at Techno Frontier

Transphorm Demonstrates GaN Progress at Techno Frontier

Dialog Semiconductor Terminates Merger Talks with AMS

Dialog Semiconductor Terminates Merger Talks with AMS


News Jul 23, 2014 by Jeff Shepard
Mitsubishi Previews CSTBT IGBT Power Modules for EVs

Mitsubishi Previews CSTBT IGBT Power Modules for EVs

Brushed Motor Pre-Driver IC supports Advanced Safety Capabilities

Brushed Motor Pre-Driver IC supports Advanced Safety Capabilities

Torex and LEM Preview Future Products

Torex and LEM Preview Future Products

3-Channel DC-DC PMIC in Single-Chip Solution

3-Channel DC-DC PMIC in Single-Chip Solution

10A and 20A Silicon Carbide Schottky Diodes

10A and 20A Silicon Carbide Schottky Diodes

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Efficient Redundancy through MOSFET Technology

Efficient Redundancy through MOSFET Technology

Compact NTC Chip Thermistors with Ratings to +150 C

Compact NTC Chip Thermistors with Ratings to +150 C

ON Semi to Demo Broad Range of Power Solutions at Techno-Frontier

ON Semi to Demo Broad Range of Power Solutions at Techno-Frontier

Europeans Seek Solid State Circuit Breakers for DC Microgrids

Europeans Seek Solid State Circuit Breakers for DC Microgrids


News Jul 14, 2014 by Jeff Shepard
A4WP-Compliant 35W Wireless Power Transfer with GaN

A4WP-Compliant 35W Wireless Power Transfer with GaN

GaN Widens the Performance Gap with the Silicon MOSFETs

GaN Widens the Performance Gap with the Silicon MOSFETs

Isolated Primary-Side LED Driver with Integrated 650V FET

Isolated Primary-Side LED Driver with Integrated 650V FET

8-inch IGBT Wafer and Module Production Opens in China

8-inch IGBT Wafer and Module Production Opens in China


News Jul 09, 2014 by Jeff Shepard
Long-Side Termination Thick-Film Chip Resistors for Automotive Circuits

Long-Side Termination Thick-Film Chip Resistors for Automotive Circuits

German Researchers use SiC and GaN to Cut Energy Loss in Half

German Researchers use SiC and GaN to Cut Energy Loss in Half


News Jun 30, 2014 by Jeff Shepard
MOSFETs Operate for 35 Years at 150 Degrees C

MOSFETs Operate for 35 Years at 150 Degrees C

Smartenergy ramps up Crystalline Silicon PV Production in Germany

Smartenergy ramps up Crystalline Silicon PV Production in Germany


News Jun 26, 2014 by Jeff Shepard