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5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

650V Superjunction MOSFETs in TO-Leadless Package

650V Superjunction MOSFETs in TO-Leadless Package

Integrating 2 Modules Enables 4-Quadrant Operation

Integrating 2 Modules Enables 4-Quadrant Operation

ENGIE Acquires Majority Stake in Green Charge Networks

ENGIE Acquires Majority Stake in Green Charge Networks


News May 12, 2016 by Jeff Shepard
GaN Partnership pened by Exagan and TUV NORD GROUP

GaN Partnership pened by Exagan and TUV NORD GROUP

Vincotech Expands offering to Mid-Power Inverters

Vincotech Expands offering to Mid-Power Inverters

Dyson Centre for Engineering Design opens in Cambridge

Dyson Centre for Engineering Design opens in Cambridge


News May 11, 2016 by Jeff Shepard
£20m Center to Study Energy Grid Supply and Demand

£20m Center to Study Energy Grid Supply and Demand


News May 11, 2016 by Jeff Shepard
Analog Devices previews Energy Harvesting PMICs

Analog Devices previews Energy Harvesting PMICs

Split-Core Current Transformers use Rogowski Coils

Split-Core Current Transformers use Rogowski Coils

Three-Level Topology for Solar Applications

Three-Level Topology for Solar Applications

Compact Gate Drivers with Increased Creepage Distance

Compact Gate Drivers with Increased Creepage Distance

Panasonic Showcases GaN, Thermal and Passive Solutions

Panasonic Showcases GaN, Thermal and Passive Solutions

Acquisition Expands Altair’s Electromagnetics Software Portfolio

Acquisition Expands Altair’s Electromagnetics Software Portfolio


News May 10, 2016 by Jeff Shepard
SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

All-SiC Half-Bridge Power Module & Gate Driver Combination

All-SiC Half-Bridge Power Module & Gate Driver Combination

Platform Improves RE Safety, Reliability and Efficiency

Platform Improves RE Safety, Reliability and Efficiency

Total to Acquire Saft for €950 Million

Total to Acquire Saft for €950 Million


News May 09, 2016 by Jeff Shepard
1200V IGBTs based on Ultra Field Stop Technology

1200V IGBTs based on Ultra Field Stop Technology

High Power, Ultra-low Ohmic Current Sense Resistors

High Power, Ultra-low Ohmic Current Sense Resistors