TriQuint Semiconductor Inc. (Hillsboro, OR) reported that it will develop high-power, wide-band amplifiers in gallium nitride under a multi-year contract from the Defense Advanced Research Projects Agency (DARPA). Gallium nitride high electron mobility transistor (HEMT) devices are meant to provide higher power density and efficiency in high-power, phased-array radar, electronic warfare, missile seeker and communications systems applications.
In the first phase of the project, to last three years and valued at $15.8 million, the gallium nitride material and devices are to be developed. In the second half of the project, to cover another two years, and valued at $15.9 million, the gallium nitride high-power, wide-band amplifiers and package technology are to be developed for insertion into Department of Defense systems.
"TriQuint is very excited to be leading a highly qualified team in the development of this new technology," stated TriQuint Research and Development General Manager Anthony Balistreri. "Gallium nitride offers a five-fold improvement in power density compared to gallium arsenide devices, and makes it ideal for high power radar and communications applications. TriQuint looks forward to providing high-volume, cost-effective foundry services and standard products based on gallium nitride."
