TankeBlue Announces Progress On Scale Up Production Of 3 Inch SiC Wafer

September 01, 2009 by Jeff Shepard

TankeBlue Semiconductor Co. Ltd. has recently scaled-up production of 3" SiC wafers. Early this year, TankeBlue lowered its 2" wafers’ price to what it describes as a record level in response to the increasing market demands of SiC customers worldwide. Currently, it can supply, in lager scale, conductive n-type 3" 4H-SiC wafers with a micro-pipe density below 10cm², a key quality parameter for applications.

The other key quality parameters, such as the resistivity (less than 0.03, the full width at the half maximum (FWHM: 30 arcsec) of X-ray rocking curve, of the 3" 4H-SiC wafer also make the wafer quality very competitive compared to other suppliers from the United States and Europe. In addition, the wafer processing quality of the SiC wafers is proven to be epi-ready, excellent for growth of GaN and/or SiC epi-layers on the SiC wafer. The SiC devices, such as the Schottky barrier diode, metal semiconductor / oxide field effect transistor, processed on the wafer by customers, have demonstrated high performance comparable with those on SiC wafers from other suppliers. It is clear that this makes TankeBlue a new supply source of 3" SiC wafers and, surely, it is a welcome move for the worldwide SiC semiconductor community.

As is well known, the silicon-based semiconductor devices are difficult to operate at temperatures above 523 K. This limits the functions and applications of silicon-based devices. The n-type SiC wafer is a suitable substrate for fabricating SiC power devices in high-temperature, high-power, high-frequency and high-radiation applications and for energy saving requirements.