ROHM to Expand Production Capacity of SiC Power Devices

June 05, 2018 by Paul Shepard

ROHM Semiconductor has recently announced plans to construct a new building at its Apollo plant in Chikugo, Japan, in order to expand production capacity to meet the rising demand for SiC power devices. The building will feature 3 stories aboveground encompassing a floor area of approximately 11,000m2. Detailed designs are currently underway, with construction slated to begin in early 2019 and completed by the end of 2020. Production efficiency is to be improved by further increasing wafer size and using the latest equipment.

In addition to mass producing SiC power devices (SiC SBDs and MOSFETs) since 2010, ROHM was the first supplier to begin production of full SiC power modules and SiC trench MOSFETs, and continues to develop industry-leading technologies.

At the same time, we have established a vertically integrated production system across the entire group, and have been working to increase the production efficiency by increasing wafer size and utilizing the latest equipment.

The new building will significantly boost ROHM's production capacity of SiC devices (expected to be key to improving energy conservation), to meet the need for increased energy saving measures on a global scale.

And going forward, the ROHM Group will continue to ensure stable product supply by quickly understanding market conditions and strengthening production capacity while implementing multi-site production, inventory control, and disaster prevention activities.