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RF Micro Devices Unveils rGaN-HV Process Technology for Power Device Products

April 25, 2012 by Jeff Shepard

RF Micro Devices, Inc. announced the extension of RFMD’s GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.

RFMD says that its newest GaN process technology -- rGaN-HV™ -- enables substantial system cost and energy savings in power conversion applications ranging from 1 to 50 KW. RFMD’s rGaN-HV delivers device breakdown voltages up to 900 volts, high peak current capability, and ultra-fast switching times for GaN power switches and diodes. The new technology complements RFMD’s GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400V, and RFMD’s GaN 2 process, which is optimized for high linearity applications and delivers high breakdown voltage over 300 volts. RFMD will manufacture discrete power device components for customers in its Greensboro, North Carolina, wafer fabrication facility (fab) and provide access to rGaN-HV to foundry customers for their customized power device solutions.

Bob Bruggeworth, President and Chief Executive Officer of RFMD, said, "The global demand for energy savings through improved power conversion efficiency is creating a tremendous opportunity for high-performance power devices based on RFMD’s GaN power process technologies. We expect our newest GaN power process will expand our opportunities in the high-voltage power semiconductor market, and we are pleased to provide access to rGaN-HV to our external foundry customers to support their success in the high-performance power device market."