Experts from Philips Semiconductors (San Jose, CA) and Pennsylvania State University have jointly developed an advanced metal-oxide semiconductor field-effect transistor (MOSFET) model based on the accurate calculation and extensive use of the surface potential. The model has been submitted to the Compact Model Council as a candidate for standardization.
The compact model developed by Philips and Pennania State is based on fundamental physics (the surface potential approach) over the entire operating regime, whereas the existing CMC-standard models are based on a simplified description of two limiting regimes (sub-threshold and strong inversion) and use mathematical, not physical, techniques to approximate the behavior between these regimes. The new model is called PSP and builds on the Philips MOS Model 11 and the Penn State SP model. The model also provides a better description of high-frequency behavior, which is important in the design of RF CMOS circuits.
"We believe our model significantly advances the state-of-the-art in compact modeling," said Pennsylvania State Professor of Electrical Engineering Gennady Gildenblat. "This cooperation enables wide industrial applications of our fundamental academic research. It has been verified against measurements on transistors from various industrial parties, made with the latest CMOS technology down to 65 nm generations. The new PSP model accurately predicts the transistor behavior up to frequencies well above 50 GHz."
