ON Semiconductor Corp. (Phoenix, AZ) announced a unique trench process technology that on average is claimed to deliver a 40 percent improvement in on-resistance when compared to other trench processes on the market. Before the end of the year, the company plans to introduce a complete portfolio of p-channel and n-channel MOSFETs that are based on this innovative trench technology.
Focus applications of the initial devices, which will begin sampling in March 2003, will be load management, circuit charging, battery protection, and dc/dc conversion in portable and wireless products. High-performance trench-based devices for computing and automotive applications will follow.
"An improved cell geometry combined with ON Semiconductor's trench technology is a union that delivers best-in-class on-resistance characteristics, translating directly into extended battery life, higher power-conversion characteristics and higher thermal efficiencies," said Ramesh Ramchandani, ON Semiconductor vice president and general manager of Integrated Power Products.
