Mitsubishi to Ship Samples of Modules with Gen-Seven IGBTs

Mitsubishi Electric Corporation announced today that it would begin shipping samples of its new T series power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBTs), comprising three different packages and 48 models in total. The new modules realize improved power loss and reliability for general-purpose inverters, elevators, uninterruptible power supplies (UPS) and other industrial equipment. Sample shipments will begin June 30.

Product include: Reduced power loss thanks to seventh-generation IGBT and seventh-generation diode; Seventh-generation CSTBTâ„¢ chip achieves low power loss and low EMI noise. Relaxed Field of Cathode (RFC) diode chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge. Mitsubishi Electric's original IGBT chip construction incorporating carrier-store effect

The P layer is added partially on cathode side and the hole is injected during recovery term to soften the recovery waveform and to suppress the surge voltage (only for 1200V rating). Reliability of de facto standard package are improved by latest package technology. The internal structure is improved, keeping compatibility with de facto standard package. Integration of insulation and copper base in the substrate, along with improved internal electrode construction, helps to increase thermal cycle life and lower internal inductance, leading to more reliable equipment performance.

In the NX-type Solder Pin Package are modules rated for 650V and 100A to 600A and 1200V modules rated for 100A to 1000A. In the NX-type Press Fit Pin Package are modules rated for 650V and 100A to 600A and 1200V modules rated for 100A to 1000A. In the Standard-type Package are 650V modules rated for 100A to 600A and 1200V modules also rated for 100A to 600A.