Dynex Power Inc. (Lincoln, UK) announced that it has been awarded a research and development grant in a new European program, Establish Silicon Carbide Applications for Power Electronics in Europe (ESCAPEE), to develop 3.3kV power MOSFET and schottky diode technology from silicon carbide.
The ESCAPEE project is a 36-month collaboration that commenced in April this year. The total research contract is worth approximately $5.6 million with funding of approximately $3.5 million being shared among the four commercial partners and research institutions involved.
