20 Most-Read Material Developments Stories for 2016: 20-11

January 01, 2017 by Power Pulse1595211359

Among the important trends in power electronics technology is the maturing of new semiconductor materials such as SiC, GaN, GaAs, and so on. PowerPulse provides comprehensive and focused coverage of technology, business and research trends in this area in our Material Developments section. In 2016, PowerPulse published 108 stories on developments in advanced semiconductor materials. You will find all the articles in Material Developments.

The following is a listing (with links for the full story) of some of the most-read Material Developments stories in PowerPulse.Net for 2016, thus providing a window into the "pulse" of the trends and interests in new power semiconductor materials and devices in the Global Power Electronics Industry. This is the first article in this brief series, which will conclude tomorrow.

#20: Choice between Si, SiC and GaN Growing in Complexity

A team of authors from Infineon and the Power Electronic Systems Laboratory, ETH Zurich, presented a detailed analysis of the technical tradeoffs facing power conversion engineers when choosing between Si, SiC and GaN power devices for various power converter designs. The paper, "Si, SiC and GaN power devices: an unbiased view on key performance indicators" was presented at the recent IEEE International Electron Devices Meeting. More.

#19: Increasing Reliability Data for GaN Devices

Efficient Power Conversion (EPC) announces its Phase Eight Reliability Report showing the results of the rigorous set of JEDEC-based qualification stress tests eGaN FETS and integrated circuits undertake prior to being considered qualified products. This report provides additional details as to why eGaN® devices are performing with excellent reliability in end user applications, as well as examining areas of improvement along the learning curve of using a maturing, yet disruptive technology. More.

#18: 650V / 5A SiC Schottky Barrier Diodes

Sanken Electric has expanded its lineup of SiC Schottky diodes. The new FMDA-10565 SiC Schottky is rated for 650V and 5A with a typical forward voltage drop of 1.5V at 25 degrees C. Taking advantage of the high speed switching capability of SiC, these diodes achieve reduced switching loss, and reduced reverse leakage current at high temperatures. At 25 degrees C, typical leakage current is 15µA at a junction temperature of 150 degrees C, typical leakage current is 70µA. More.

#17: GaAs Power Conversion coming from ams and Sarda

The Full Service Foundry division of ams AG and Sarda Technologies, Inc. announced at Cadence Design Systems, Inc.'s CDNLive user conference in Santa Clara, California, that ams is manufacturing Sarda's advanced high-voltage CMOS drivers which play a key role in their gallium-arsenide (GaAs) Heterogeneous Integrated Power Stage (HIPS). Sarda has HIPS prototypes that demonstrate very low switching loss up to 4MHz for 12V input and 14A, 1V output. The company is developing a family of HIPS products that support a wide range of input voltages and output currents. More.

#16: 1-GHz Optically-Isolated Measurements for GaN and SiC

Tektronix announced that the IsoVuâ„¢ Measurement System previewed earlier this year at the APEC 2016 show is now shipping and available for worldwide delivery to customers. Pricing for the optically isolated measurement system starts at $12,000. More.

#15: Isolated Drivers for GaN and SiC claim Highest Noise Immunity

Silicon Labs has launched a family of isolated gate drivers that solves a critical need for cutting-edge power supply designs. Based on Silicon Labs' proven digital isolation technology, the new Si827x ISOdriver family claims the highest noise immunity of any gate driver on the market. This industry-leading common mode transient immunity (CMTI) makes the Si827x drivers well-suited for fast-switching and potentially noisy power supply systems. Target applications include power supplies for servers, computers and base stations, as well as solar power inverters and microinverters, class D amplifiers, motor controllers, and chargers for electric vehicle/hybrid-electric vehicles (EV/HEV). More.

#14: Dialog Semi Enters GaN Power IC Market

Dialog Semiconductor plc announced and is demonstrating its first gallium nitride (GaN) power IC product offering, using Taiwan Semiconductor Manufacturing Corporation's (TSMCs) 650-Volt GaN-on-Silicon process technology. The DA8801 together with Dialog's patented digital Rapid Chargeâ„¢ power conversion controllers will enable more efficient, smaller, and higher power density adapters compared to traditional silicon FET-based designs today. Dialog is initially targeting the fast charging smartphone and computing adapter segment with its GaN solutions, where it already enjoys more than 70 percent market share with its power conversion controllers. More.

#13: SIC FETs enable Cure for EV Range Anxiety

Silicon-carbide (SiC) power electronics from STMicroelectronics has enabled the creation of ZapCharger Portable, the world's smallest, smartest, and safest electric-car charging station from Zaptec, an innovative start-up company. ZapCharger Portable was initially developed with and for Renault, to give Zoe owners the best and most robust, reliable and portable charging solution possible. More.

#12: 25A / 650V Hermetic SiC FETs handle 225 Degrees C

TT Electronics launched a SiC power MOSFET that is designed for high-temperature, power efficiency applications with a maximum junction temperature of +225 degrees C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be used in applications, including distribution control systems with greater environmental challenges, such as those in close proximity to a combustion engine. More.

#11: SiC Power Devices Aim to Accelerate Automotive Electrification

STMicroelectronics has announced high-efficiency power semiconductors for Hybrid and Electric Vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101. The company is fabricating SiC MOSFETs and diodes on 4-inch wafers. In order to drive down the manufacturing costs, improve the quality, and deliver the large volumes demanded by the auto industry, ST is scaling up its production of SiC MOSFETs and diodes to 6-inch wafers, and is on schedule to complete both conversions by the end of 2016. More.