Vishay Releases New 20V N-Channel Power MOSFET Plus Schottky Diode With 1.6 x1.6mm Footprint

Vishay Intertechnology, Inc. announced what it describes as the industry’s smallest 20V n-channel power MOSFET plus Schottky diode. Featuring the 1.6 x 1.6mm thermally enhanced PowerPAK® SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32V at 100mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5V.

As portable electronics become more compact, the size of components becomes critical. With its ultra-compact footprint, the SiB800EDK is 36% smaller than devices in 2 x 2mm packages, while offering an ultra-thin 0.75mm profile. The integration of two components into one package not only saves space, but the inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.

The SiB800EDK offers low on-resistance values from 0.960Ω at 1.5V VGS to 0.225Ω at 4.5-V VGS. The low on-resistance rating at 1.5V allows the MOSFET to be used with signals at low levels.

Typical applications for the new device will include level shift switching in I²C interface and boost converters in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The SiB800EDK features ESD protection, and is 100% lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the new SiB800EDK are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.17.