Vishay Releases 190V N-Channel Power MOSFET Plus 190V Co-Packaged Power Diode
Vishay Intertechnology, Inc. announced what it describes as the industry’s first 190V n-channel power MOSFET plus co-packaged 190V power diode with a compact 2 x 2mm footprint and an ultra-thin 0.75mm profile. Offered in the PowerPAK® SC-70 package, the SiA850DJ is also said to be the industry’s first such device with an on-resistance rating at 1.8V VGS.
Typical applications for the SiA850DJ will include boost dc-dc converters for high-voltage piezoelectric motors and organic LED (OLED) backlighting in portable devices such as cell phones, PDAs, MP3 players, and smart phones.
Integrating the MOSFET and the power diode into the same package saves designers at least one-third of the PCB area, while at the same time lowering solution costs by eliminating the need for an external diode. While larger devices feature on-resistance ratings down to 2.5V, the SiA850DJ is rated down to 1.8V, which further saves board space by reducing the need for level shift circuitry. The device offers low on-resistance values from 17Ω at 1.8V VGS to 3.8V at 4.5V VGS, and a diode forward voltage of 1.2V at 0.5A.
The SiA850DJ is 100 % lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.
Samples and production quantities of the new SiA850DJ are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.17.
