Vishay Launches 60V TrenchFET Power MOSFET With 6.1mΩ On-Resistance In SO-8 Size Package
Vishay Intertechnology Inc. introduced a power MOSFET which it describes as the industry’s lowest on-resistance for a 60V device in a package with double-sided cooling. The new SiE876DF, which comes in an SO-8 sized PolarPAK® package, boasts maximum on-resistance of 6.1mΩ at a 10V gate drive, said to be a 13% improvement over the next best comparable device on the market.
The n-channel SiE876DF is targeted at industrial-type power supplies, motor control circuits, ac-dc power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It will also be used as a primary side switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs.
According to Vishay, in each of these applications, the low on-resistance of the SiE876DF will translate into lower conduction losses and thus save on energy. In addition to the low conduction losses provided by its TrenchFET® silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. The PolarPAK’s leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150 V, thus simplifying PCB design. The SiE876DF is also 100 % Rg- and UIS-tested.
Samples and production quantities of the SiE876DF 60-V are available now, with lead times of 10 to 12 weeks for larger orders. Pricing in 100,000-piece quantities for U.S. delivery starts at $0.96.
