New Industry Products

Vishay Introduces First P-Channel TrenchFET Gen III Power MOSFET in Chipscale MICRO FOOT Package

April 26, 2010 by Jeff Shepard

Vishay Intertechnology, Inc. introduced the first p-channel TrenchFET® Gen III power MOSFET in the chipscale MICRO FOOT® package. The 20V device features what the company says is the industry’s lowest on-resistance for a p-channel MOSFET in the 1.5 by 1mm footprint area.

The new Si8499DB is the first chipscale product built on TrenchFET Gen III p-channel technology. This technology allows a superfine, sub-micron pitch process that is said to cut the industry’s best on-resistance for a p-channel MOSFET by up to half.

Vishay’s TrenchFET Gen III p-channel technology allows the Si8499DB to offer ultra-low on-resistance of 32mΩ at 4.5V, 46mΩ at 2.5V, 65mΩ at 2V, and 120mΩ at 1.8V. These values are 50% lower at 4.5V and 35% lower at 2.5V than the previously leading 20V p-channel chipscale device.

The Si8499DB combines TrenchFET Gen III p-channel technology with the maximum die size to footprint ratio of the device’s chipscale packaging, providing an ultra-low on-resistance in a very compact device. The PCB real estate required by the MICRO FOOT package is one-sixth the size of the TSOP-6 while offering somewhat comparable on-resistance, thus saving space for other product features or enabling smaller end products.

The MOSFET’s low on-resistance translates into lower voltage drops in load, charger, and battery switches, resulting in faster charging and longer battery life between charges in handheld devices such as cell phones, smart phones, PDAs, and MP3 players.

The MOSFET is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC.

Samples and production quantities of the new Si8499DB TrenchFET power MOSFET are available now, with lead times of 16 weeks for larger orders. Pricing for U.S. delivery starts at $0.14 in 100,000-piece quantities.