Vishay Introduces 8V N-Channel TrenchFET Power MOSFET

Vishay Intertechnology, Inc. introduced a new 8V n-channel TrenchFET® power MOSFET featuring the industry’s lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK® SC-70 2 by 2mm footprint area.

The new SiA436DJ offers an ultra-low on-resistance of 9.4mΩ at 4.5V, 10.5mΩ at 2.5V, 12.5mΩ at 1.8V, 18mΩ at 1.5V, and 36mΩ at 1.2V. These values are up to 18% lower than previous-generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2 by 2mm footprint area.

The SiA436DJ will be used for load switching in portable electronics such as smartphones and tablet PCs, as well as mobile computing applications. The device’s ultra-compact PowerPAK SC-70 package saves PCB space in these applications while its low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.

The MOSFET’s on-resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. The SiA436DJ’s low on-resistance also means a lower voltage drop across the load switch to prevent unwanted undervoltage lockout.

The SiA436DJ is 100% Rg-tested, halogen-free in accordance with IEC 61249-2-21, and RoHS-compliant.

Samples and production quantities of the new SiA436DJ TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.25 per piece in 100,000-piece quantities.