Vishay Extends P-Channel TrenchFET Gen III Technology To Ultra-Small Packages

Vishay Intertechnology, Inc. introduced a new dual 20-V p-channel TrenchFET® Gen III power MOSFET with what the company describes as the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2-mm by 2mm footprint area.

With the SiA921EDJ, Vishay extends its p-channel TrenchFET Gen III technology to ultra-small packages for handheld electronics. The new device will be used for dc-to-dc buck converters, as well as load, PA, and battery switches in portable devices such as cell phones, smart phones, PDAs, and MP3 players. The lower on-resistance of the SiA921EDJ translates into lower power consumption, saving power and prolonging battery life between charges in these devices.

The SiA921EDJ offers an ultra-low on-resistance of 59m& at 4.5V and 98m& at 2.5V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, which the company says allows the device to perform switching tasks with less power than any previous dual p-channel power MOSFETs on the market.

The closest competing p-channel device with a > 12V gate-to-source rating features on-resistance of 95mΩ at a 4.5V gate drive and 141mΩ at 2.5V. These values are 38 and 44% higher, respectively, than the SiA921EDJ. The compact 2 by 2mm footprint of the PowerPAK SC-70 is half the size of the TSOP-6, while offering comparable on-resistance. The MOSFET is halogen-free in accordance with IEC 61249-2-21.

Samples and production quantities of the new SiA921EDJ TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.15.