Vishay Debuts TSFF5410/5210 and TSMF4710/3710 Emitters
Vishay Intertechnology Inc. (Malvern, PA) introduced a new family of high-speed infrared emitters offering radiant power and intensity. Built on double hetero chip GaAlAs/GaAlAs technology, the new IR emitters offer improvements of up to 43% in radiant intensity compared with previous-generation devices, extending the range and reliability of infrared data transmission and light barrier systems in the automotive, consumer and industrial environments.
The four new devices feature an 870 nm peak wavelength and an energy-saving typical forward voltage of just 1.5 V. The TSFF5410 combines a ±22° angle of half intensity with typical radiant intensity of 70 mW/sr, while the TSFF5210 combines a ±10° angle of half intensity with radiant intensity of 180 mW/sr. Both devices feature a high modulation bandwidth of 23 MHz and typical rise and fall times of just 15 ns. Both the TSMF4710 and TSMF3710 devices offer a 60° angle of half intensity and typical radiant intensity of 10 mW/sr, with typical rise and fall times of 15 ns for the TSMF4710 (with 23 MHz modulation bandwidth) and 30 ns for the TSMF3710 (with 12 MHz modulation bandwidth).
Samples of the TSFF5410, TSFF5210, TSMF4710 and TSMF3710 are available now. Production quantities will be available in the third quarter of 2004, with lead times of 12 weeks for larger orders. Pricing per 100 pieces in 50,000-piece quantities is $37.50 for the TSFF5410, $38.50 for the TSFF5210, $20.80 for the TSMF4710 and $18.80 for the TSMF3710.
