Vishay Adds TrenchFET® Power MOSFETs For OR-ing Applications

Vishay Intertechnology, Inc. introduced three power MOSFETs for OR-ing applications that offer what is described as best-in-class on-resistance performance with a choice of three package options.

The three n-channel MOSFETs released feature 20V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6Ω in the SO-8 footprint area. Vishay claims that, compared with competing devices, on-resistance performance for these power MOSFETs is up to 36% lower than the next best devices on the market with the same voltage specifications and package types. Designers can choose among the three TrenchFET® Gen II devices depending upon the specific circuit and thermal requirements of their applications.

The new Si4398DY delivers an r_DS(on) rating of 2.8Ω at 10V. In addition to OR-ing applications, the Si4398DY can be used for low-power synchronous rectification, dc-to-dc, and point-of-load power conversion circuitry. For low-voltage power supplies, the Si4398DY is said to offer the best r_DS(on) ratings available in the SO-8 package. As power increases, power MOSFETs in thermally enhanced packages can conduct more current in the same footprint, reducing the number of devices needed for the application. This allows the power density to be increased with a 12V rail voltage topology in ac or dc switchmode power supplies requiring redundant circuitry.

For optimal heat dissipation in still-air environments, Vishay is releasing the Si7866ADP in the thermally enhanced PowerPAK® SO-8 package. With a maximum on-resistance rating of 2.4Ω at 10V, the Si7866ADP is said to combine low conduction losses with robust thermal performance. Maximum junction-to-case thermal resistance is a typical 1.5°C/W, compared to the 16°C/W. In addition to OR-ing, its target applications include synchronous buck converters in desktop computers and low output voltage synchronous rectification.

For implementations with forced-air cooling, the previously released SiE808DF in the PolarPAK® package, with dual heat dissipation paths on the top and bottom of the device, is said to offer 20% lower on-resistance than the next best device with double-sided cooling. Its extraordinarily low maximum rDS(on) rating is 1.5Ω at 10V.

Samples and production quantities of the Si4398DY, the Si7866ADP, and SiE808DF are available now, with lead times of 12 to 14 weeks for larger orders