Transphorm Introduces The SuperGan GeN IV Platform
Transphorm introduces the latest developments in its GaN-powered technology.
Transphorm specializes in the distribution of high-performing and high-quality semiconductor technology. The company is a US-based global leader in the design and manufacture of highly reliable 650 V and 900 V Gallium Nitride (GaN) semiconductors for high-voltage power conversion applications.
Transphorm’s expert engineers and strong IP portfolio fuelled the development of the industry’s first JEDEC- and Automotive Electronics Council (AEC)-Q101-qualified GaN field-effect transistors (FETs). Recently, the company announced the release of its new generation (Gen) IV GaN platform. This platform and other future platform generation that Transphorm intend to create will be called SuperGaN technologies.
Transphorm’s SuperGaN Gen IV Platform. Image used courtesy of Transphorm Inc.
The SuperGaN Gen IV Platform
Transphorm's engineers used learnings from previous technological designs to improve product performance and simplicity, reduce costs, and foster continued reliability in product performance. Benefits of the new SuperGaN Gen IV platform include:
Increased Performance: Gen IV provides a flatter and higher efficiency curve with an improved Figure of Merit (RON*QOSS) of approximately 10 %.
Easier Designability: Gen IV offers increased simplicity of design-in by removing the need for a switching node snubber at high operation currents.
Enhanced Inrush Current Capability (di/dt): Gen IV removes the switching current limits for the built-in freewheeling diode function in half-bridges.
Reduced Device Cost: Gen IV’s design innovations and patented technology simplify device assembly. Costs bring Transphorm’s GaN closer to silicon transistor pricing.
Proven Robustness/Reliability: Gen IV’s 35 mΩ FET offers the same gate robustness of +/- 20 Vmax and noise immunity of 4 V that is currently delivered by Transphorm’s Gen III devices.
The first JEDEC-qualified SuperGaN device produced using the Gen IV platform is the TP65H300G4LSG. The 650V 240mΩ GaN FET is a normally-OFF device and is available in a PQFN88 package.
The device incorporates high voltage GaN high-electron-mobility transistor (HEMT) with a low voltage silicon metal-oxide-semiconductor field-effect transistor (MOSFET) for improved reliability and performance.
Additionally, the new FET is easy to drive exhibiting compatibility with standard gate drivers, reduces conduction and switching losses, eliminates the need for a free-wheeling diode (with a low Qrr of 23nC), and is RoHS compliant and Halogen-free.
Image 2 – Transphorm’s SuperGaN Power FETs. Image used courtesy of Transphorm Inc.
Benefits of using the TP65H300G4LSG include easy implementation of bridgeless totem-pole designs, increased efficiency through fast switching, increased power density, reduced system size and weight, and a lower manufacturing cost.
The second JEDEC-qualified device yielded from the Gen IV platform is the TP65H035G4WS, a 35 mΩ 650 V GaN FET in a TO-247 package. Like the TP65H300G4LSG, this FET also features a high-voltage GaN HEMT with a low voltage silicon MOSFET. The device exhibits a very low Qrr, a robust design, reduces cross-over loss, and comes dynamic RDS(on)eff production tested.
Customers can benefit from the improved high-speed design, increased efficiency in both soft- and hard-switched circuits, easy drivability with commonly used gate drivers, the ability to integrate with AC-DC bridgeless totem-pole PFC designs, and easy drivability with commonly-used gate drivers.