Toshiba Offers Diode With ESD Protection & EMI Filtering For Portable Electronics

Toshiba America Electronic Components, Inc., (TAEC) has added a diode with electrostatic discharge (ESD) protection and electromagnetic interference (EMI) filtering. The Toshiba DF3S6.8ECT protection diode provides digital and mobile equipment such as cell phones, PDAs, notebook PCs, digital cameras, and GPS devices with EMI and ESD protection from electrostatic discharge energy that is introduced from I/O ports and travels through the connectors onto the system boards.

The EMI/ESD diode features a high ESD protection level with clip voltage of 6.8V, and high ESD immunity level of +8kV (min.) @ IEC61000-4-2 (contact discharge). The Toshiba DF3S6.8ECT is offered in a small, thin three-pin CST3 package that measures 1.0 x 0.6 x 0.38mm.

"This EMI/ESD protection circuit does not cause signal distortion, and is suitable for applications such as high-speed digital circuits and high-frequency circuits," said Talayeh Saderi, Business Development Engineer, RF and Small Signal Devices, for TAEC.

Other key characteristics include: a chip voltage of 6.8V (typ.) @ IR=5mA; a reverse current of 0.5mA (max.) @ VR=5V; an ESD Immunity Level of > +8kV@IEC61000-4-2 (contact discharge); and an absolute attenuation of -20dB @ 0.8 to 2.0 GHz.