Toshiba Launches Next-Gen 650V Super Junction Power MOSFETs
Toshiba Electronic Devices & Storage Corporation has launched eight 650V new generation super junction N-channel power MOSFET products in the DTMOSVI series. These power MOSFETs feature current ratings from 15A to 24A and on resistances from 0.11Ω to 0.21Ω.
The new devices are optimized for use in switching power supply for industrial equipment, server power supplies, power conditioners for photovoltaic installations and uninterruptible power systems.
The new generation DTMOSVI series has reduced the values of “drain-source On-resistance x gate-drain charge”—a figure of merit—by about 40% compared with the previous generation DTMOSIV-H series, allowing the efficiency of switching power supplies to be improved by about 0.36%.