Toshiba Launches High-speed Dual N-channel MOSFETs

Toshiba Corporation has launched a low-capacitance, 4A dual N-channel MOSFET for high-speed switches in the high-current charging circuits of mobile devices, such as smartphones and tablets. Operating at 3MHz, these devices feature a typical on-resistance of 67 mOhms with a V(GS) of 4.5V and are packaged in a 2mm square SOT1118 configuration. QG is is 1.8 nC, VGSS is +/-12V and VDSS is 30V

As additional functions are added to mobile devices, including smartphones, cellular phones, tablets and notebook PCs, and as increasing demands are made on the batteries of those devices, efforts continue to improve the user experience and cut charge times by boosting charge density and significantly increasing the charging current and frequency. Toshiba's new low capacitance product "SSM6N58NU" is the company's latest addition to its dual N-channel MOSFET line-up, suitable as high-speed switches for high-current charging circuits.