TAEC Releases TIM5964-90SL GaAs FET

Toshiba America Electronic Components Inc. (TAEC, Japan) released what it claims to be the industry's first 90W c-band gallium arsenide field effect transistor (GaAs FET) that is suitable for use in solid-state power amplifiers for base stations or earth-station satellite communications and radar applications, as well as for microwave digital radios for terrestrial communications.

Implemented in the company's HFET process technology, the TIM5964-90SL device employs ion-plantation technology to produce an output power of 49.5dBm at a frequency range of 5.9GHz to 6.4GHz. The TIM5964-90SL is priced at $1,500.