TAEC Debuts UHS U-MOS III Al-Strap MOSFETs

Toshiba America Electronic Components Inc. (TAEC, Irvine, CA) announced the availability of a family of power MOSFETS using new ultra-high-speed U-MOS III technology with the first use of aluminum strap (Al-Strap) connections that improve on-resistance by 34% (Vgs=4.5V) and reduce gate charge by 14% compared to U-MOS III with standard wire bond technology. The new family of UHS U-MOS III with Al-Strap MOSFETs is targeted for synchronous rectification applications in dc/dc converters and in power supplies for desktop and mobile computers, servers, networking, and telecom equipment.

The new family of power MOSFETs includes the TPC8017-H and TPC8018-H, which are 30V/15V and 18A devices using the new ultra-high-speed U-MOS III technology. Use of the new UHS U-MOS III enables reduction of RDS(On) by 43% compared to previous-generation devices, and improves power dissipation and reliability. The new family of n-channel single MOSFETs also includes the TPC8015-H and TPC8016-H, which are 30V/13V and 15A MOSFETs based on the company's current U-MOS III technology.

Toshiba's four Al-Strap MOSFETs are available now in SPO8 packaging, priced in sample quantities at $0.45 for the TPC8017-H 13A U-MOS III device, $0.60 for the TPC8018-H 15A U-MOS III device, $40 for the TPC8015-H 13A U-MOS III device and $0.45 for the TPC8016-H 15A U-MOS III device.