New Industry Products

STMicroelectronics Intros FDmesh Series MOSFETs

December 11, 2001 by Jeff Shepard

STMicroelectronics Inc. (Lexington, MA) introduced the first three members of its FDmesh Series of high-voltage, n-channel power MOSFETs. The new series adds short body-diode recovery time to a low on-resistance and a fast switching rate.

The three high-voltage power MOSFETs are the 500V, 45A STW45NM50FD with an RDS(on) of 90 milliohms (typical); the 20A, 500V STW20NM50FD with an RDS(on) of 220 milliohms (typical); and the 11A, 600V STP11NM60FD with an RDS(on) of 400 milliohms (typical). The MOSFETs are suitable for use in high-efficiency bridge converters, and in particular zero-voltage, phase-shift switching topologies used for high-end power supplies found in telecommunications and welding equipment.

Respective typical values of trr, Qrr and Qg for the three MOSFETs are 245ns, 2.2µC and 92nC for the STW45NM50FD; 175ns, 1.2µC and 38nC for the STW20NM50FD; and 194ns, 1.1µC and 28nC for the STP11NM60FD.

The STW45NM50FD comes in a TO-247 package. The STP20NM50FD (also available in TO-247) and STP11NM60FD each come in a TO-220 package, with D2PAK and I2PAK package options available. Samples are already available with volume production scheduled within 2001. Prices in 1,000-piece units are $7.00 for the STW45NM50FD, $3.50 for the STW20NM50FD, and $2.00 for the STP11NM60FD.