STMicroelectronics Expanding Automotive Power FET Offering
STMicroelectronics has announced a new high-current power MOSFET, designed specifically for the automotive market, which benefits from the latest optimization of ST's proprietary STripFET technology to achieve very low on-resistance. The new STD95N04 is a 40V standard level DPAK device with a maximum Rds(on) of 6.5mOhm.
This new ST STripFET technology is based on significantly increased cell density, leading to lower on-resistance and losses while using less silicon area. Other power MOSFETs now in development will use the same technology to address DPAK (30V, logic level, 4.5mOhm. typical at 4.5V) and D2PAK (40V, standard level, 2.0mOhm typical at 10V) requirements.
The just-released 80A device is intended for use in dc-dc converters, motor control, solenoid drivers and ABS systems. It is competitive in both price and the critical on-resistance performance when compared against products manufactured using conventional 'trench' technology. Typical Rds(on) is in the region of 5mOhm and it maintains standard threshold drive requirement.
The STD95N04 is compliant with the AEC Q101 Stress Test qualification for discrete semiconductors, the standard established by the AEC (Automotive Electronics Council) Component Technical Committee for components intended for use in the automotive environment. Maximum operating temperature is 175 degrees C, and the device is 100% avalanche rated.
The STD95N04 is available in volume now in DPAK and TO-220 packages. Pricing is $0.38 in quantities of 10,000 pieces.
