Siliconix Intro’s New Technology TrenchFETs

Siliconix Inc. is in production with a new family of TrenchFET power MOSFETs built on a patent-pending p-channel technology that reduces device on-resistance to as low as 5 milliohms in the PowerPAK SO-8.

Used as load switches, the p-channel power MOSFETs built on the new technology will help to reduce power consumption and the board area required for power components in cell phones, PDAs, notebook computers, and other compact, battery-operated products. In these systems, p-channel MOSFETs perform an essential role by turning off features such as the display or the power amplifier when these are not being used, or by switching the system from active mode to sleep mode, and thus saving on battery life.

Siliconix is using the new p-channel technology to upgrade all of its single-channel and dual-channel 12-V, 20-V, and 30-V p-channel MOSFETs. Devices built on the new technology will be available in all LITTLE FOOT small-outline package types (SO-8, TSSOP-8, TSOP-6, and SOT-23) as well as in the leadless, thermally enhanced PowerPAK SO-8 and 1212-8 packages.

The first 10 devices in the new family include single-channel, -12-V load switches in the PowerPAK 1212-8 and SOT-23; -20-V devices in the LITTLE FOOT SO-8 and TSSOP-8; and -30-V devices in the PowerPAK SO-8 and TSOP-6.

On-resistance for the -12-V Si7407DN, packaged in the 3.3-mm by 3.3-mm PowerPAK 1212-8, is 12 milliohms at -4.5 V, a 25% improvement over the previous state of the art for this package type. In addition to saving space, the PowerPAK 1212-8 dissipates up to 3.8 W of power. Thermal resistance of 1.9 degrees Celsius per Watt allows space

requirements to be reduced in portable electronics without increasing "hot spots."

The first LITTLE FOOT TSOP-6 devices built on the new p-channel technology include the single-channel, -30-V Si3483DV. The Si3483DV is rated for maximum on-resistance of 53 milliohms at 4.5 V, a 28% improvement over the next-best device on the market. Maximum current handling for the device is 6.2 A.

The -20-V Si4423DY, the first SO-8 device utilizing the new p-channel technology, is rated at 7.5 milliohms at 4.5 V and 11.5 milliohms at 1.8 V, improvements of 12% and 18%, respectively, over the next-best devices. The Si7451DP -30-V, p-channel device is offered in the PowerPAK SO-8. On-resistance for the device is 5 milliohms at 10 V, with a maximum VGS of 25 V.

In the TSSOP-8 package, the new -20-V Si6413DQ is rated for an on-resistance value of 16 milliohms at 1.8 V, a 26% improvement over the next-best device, and for maximum current handling of 8.8 A. The newest SOT-23 device built on Vishay's patented p-channel technology is the Si2333DS, a -12-V device that surpasses competing devices by 26% with on-resistance of 59 milliohms at 1.8 V.

In addition to these single-channel devices, the new power MOSFET family also includes dual-channel devices in the PowerPAK SO-8, LITTLE FOOT SO-8, PowerPAK 1212-8, and TSSOP-8.

Released in the PowerPAK SO-8 is the -30-V Si7945DP, rated for an on-resistance of 31 milliohms at 4.5 V and a maximum VGS of 20 V. The -12-V Si4933DY, a new dual-channel device in the LITTLE FOOT SO-8, is rated for 4.5 V, 2.5 V, and 1.8 V, with a 27% better on-resistance at 1.8 V -- just 22 milliohms -- than the nearest competing device.

The new Si7909DN, a space-saving, -12-V PowerPAK 1212-8 device, offers on-resistance of 37 milliohms at 4.5 V, as well as power dissipation of 2.8 A. In the TSSOP-8 package, the -30-V Si6993DQ provides an 11% improvement over the competition, with an on-resistance value of 31 milliohms at 10 V.

Samples and production quantities of the new p-channel power MOSFETs are available now, with lead times of 8 to 10 weeks for larger orders. Pricing for U.S. delivery ranges from $0.25 to $1.50 in 100,000-piece quantities.