New Industry Products

Siliconix Intros 7 New N-Channel TrenchFET Power MOSFETs

March 21, 1999 by Jeff Shepard

Vishay Siliconix (Santa Clara, CA) introduced seven new n-channel TrenchFET power MOSFETs for dc/dc conversion and motor control applications. The new devices combine a maximum junction temperature rating of 175 degrees C with guaranteed on-resistance specifications for 4.5V logic level operation.

The SUB70N03-09P (D2PAK), SUP70N03-09P (TO-220) and SUD50N03-10P (DPAK) feature breakdown voltage of 30V. Maximum on-resistance for the devices is 15 milliohms at a 4.5V gate drive, while typical gate charge is 45nC. Maximum current handling is 70A for the D2PAK and TO-220 devices, and 50A for the DPAK device. The SUB75N06-12L (D2PAK) and SUP75N06-12L (TO-220) offer a maximum Vds of 60V, with an on-resistance of 12 milliohms at a 10V gate drive. Maximum current handling for the devices is a full 75A. The SUB45N03-13L (D2PAK) and SUP45N03-13L offer a maximum on-resistance of 13 milliohms at 10V with a 30V breakdown voltage, and maximum current handling of 70A.

Pricing for the new TrenchFETs ranges from $0.57 to $1.01 in 100,000-piece quantities.