Siliconix Inc. (Santa Clara, CA) announced four new PowerPAK 1212-8 MOSFET devices designed for battery-charger switching and protection applications, the Si7900EDN, Si7901EDN, Si7703EDN and Si7705DN.
The new lead-less 1212-8-packaged devices save space and provide thermal performance in low-height profile packages with small footprint areas in cellular and cordless phones, pagers, PDAs, and other portable devices. The Si7900EDN, Si7901EDN, Si7703EDN, and Si7705DN each provide a low-height profile of just 1.07mm, with a footprint area of just 10.56sqmm.
The PowerPAK 1212-8 package also increases the maximum current handling from 6.5A to 9A. Power dissipation nearly doubles compared to any other power MOSFET device with a TSSOP-8-size footprint or smaller, increasing from 1.67W to 3.2W, according to the company. Thermal resistance in the PowerPAK 1212-8 MOSFETs is 1.9 degrees C per watt, reducing space without increasing "hot spots" in portable electronics.
The dual n-channel Siliconix Si7900EDN provides single- or dual-cell lithium-ion battery pack protection, with a low on-resistance of 26milliohms at a 4.5V gate drive, plus 3,000V ESD protection against electrostatic damage caused by handling and use of plug-in accessories.
The dual p-channel Si7901EDN is a bi-directional battery switch for portable electronic systems. It features a low on-resistance of 48milliohms at a -4.5V gate drive with ESD protection of 4,500V.
The Si7703EDN and Si7705DN are single p-channel PowerPAK MOSFETs designed for battery-charger switching in portable devices. Each has an on-resistance of 48milliohms at a -4.5V gate drive. The Schottky diode integrated into these two devices has a forward voltage of 0.48V at 0.5A with a reverse voltage of 20V and an average forward current of 1.0A.
Samples and production quantities of the Si7900EDN, Si7901EDN, Si7703EDN and Si7705DN are available now, with lead times of four to six weeks for larger orders.
