SiC DIPIPM Power Modules for PV Power Conditioning

Mitsubishi Electric Corp. has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT chips featuring a carrier-stored trench-gate bipolar transistor (CSTBT) structure. Built-in chips include an inverter bridge with IGBT, SiC-SBD and LVIC chips. The dimensions are 31mm x 79mm x 8mm (the same as the large DIPIPM version 4 series).

For sale from 28 November, the new 50A/600V module (PSH50YA2A6) can reduce the power consumption and size of PV inverters. Power loss is reduced by about 25% compared with Mitsubishi Electric's existing PS61A99 module for PV applications. Functions include short-circuit protection (with current detection) and control power supply under-voltage protection (with FO output on N-side protection).

The IGBT chip has a current-sensing pin that could detect a can of thousands of the main collector current and can be used for external short-circuit protection function. The current-sensing pin eliminates the need for a large external shunt resistor. Together with the modified short-circuit protection scheme, this helps to downsize PV power conditioner inverter systems.